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New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Maximov, Ivan (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Beck, Marc (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Carlberg, Patrick (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Montelius, Lars (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Pfeiffer, K. (author)
Reuther, F. (author)
Gruetzer, G. (author)
Schulz, H. (author)
Wissen, M. (author)
Scheer, H.-C. (author)
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 (creator_code:org_t)
2002
2002
English 2 s.
In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

nanoimprint lithography
high resolution negative resist mr-L 6000.1 XP
electron beam lithography
imprintable polymer
electron beam resolution
50 nm
sensitivity
chemical composition
electron beam exposure

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