MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure

• MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Publication and Content Type

art (subject category)

ref (subject category)