High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

• RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

high-k

annealing

InAs

high frequency

nanowire

MOSFET

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art (ämneskategori)

ref (ämneskategori)