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- Kivisaari, PyryLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (author)
Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
- Article/chapterEnglish2015
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- 2015
- 4 s.
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- LIBRIS-ID:oai:lup.lub.lu.se:3b7a0742-db9c-4521-881f-e32a69c2f461
- https://lup.lub.lu.se/record/3b7a0742-db9c-4521-881f-e32a69c2f461URI
- https://doi.org/10.1109/SISPAD.2015.7292342DOI
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- Language:English
- Summary in:English
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- We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.
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- Sadi, ToufikUniversity of Glasgow (author)
- Li, JingruiAalto University (author)
- Georgiev, ViharUniversity of Glasgow (author)
- Oksanen, JaniAalto University (author)
- Rinke, PatrickAalto University (author)
- Tulkki, JukkaAalto University (author)
- Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)
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- In:2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, s. 393-3969781467378581
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