Single InAs/GaSb Nanowire Low-Power CMOS Inverter

• III − V semiconductors have so far predom- inately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III − V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal − oxide − semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the di ffi culty to integrate both n- and p-type devices on the same substrate without the use of complex bu ff er layers has hampered the development of III − V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb hetero- structure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high- κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and o ff -state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V ds = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

Nyckelord

Nanowire

inverter

InAs/GaSb

low-power operation

III-V CMOS

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