Search: onr:"swepub:oai:lup.lub.lu.se:460ff860-60e3-40b6-a95e-af89cd3d7219" >
Effect of post-grow...
Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs
- Article/chapterEnglish2013
Publisher, publication year, extent ...
-
2013-03-15
-
IOP Publishing,2013
Numbers
-
LIBRIS-ID:oai:lup.lub.lu.se:460ff860-60e3-40b6-a95e-af89cd3d7219
-
https://lup.lub.lu.se/record/3567583URI
-
https://doi.org/10.1088/0022-3727/46/14/145309DOI
Supplementary language notes
-
Language:English
-
Summary in:English
Part of subdatabase
Classification
-
Subject category:art swepub-publicationtype
-
Subject category:ref swepub-contenttype
Notes
-
The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
-
Sadowski, JanuszLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-jsa
(author)
-
Kasama, Takeshi
(author)
-
Duchamp, Martial
(author)
-
Rafal, Dunin-Borkowski
(author)
-
Lunds universitetMAX IV-laboratoriet
(creator_code:org_t)
Related titles
-
In:Journal of Physics D: Applied Physics: IOP Publishing46:14, s. 7-1453091361-64630022-3727
Internet link
Find in a library
To the university's database