WFRF:(Persson Karl Magnus)
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A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
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- Johansson, Sofia (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Berg, Martin (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Persson, Karl-Magnus (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- (creator_code:org_t)
- 2013
- 2013
- English.
- In: IEEE Transactions on Electron Devices. - 0018-9383. ; 60:2, s. 776-781
- Journal article (peer-reviewed)
Subject headings
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Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- transconductance
- nanowire (NW)
- metal–oxide–semiconductor field-effect transistor (MOSFET)
- interface traps
- high-$k$
- frequency
- border traps
- InAs
- InGaAs
- Al2O3
- HfO2
Publication and Content Type
- art (subject category)
- ref (subject category)
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