Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures

• The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

AlO

capacitance

cryogenic

hysteresis

InGaAs

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)