Defect formation in al-doped SI(100) films grown by molecular-beam epitaxy and solid-phase epitaxy

• Aluminium doped Si layers grown either by solid phase epitaxy (SPE) or molecular beam epitaxy (MBE) have been investigated over wide ranges of Al fluxes (J(Al) = 1 x 10(10)-3 x 10(13) cm-2s-1) and growth temperatures (T(s) = 500-900-degrees-C), using RHEED, LEED and AES during growth and cross section TEM of the as-deposited layers. For MBE growth, defect free films could be grown almost in the whole interval of J(Al) and T(s). In the SPE case Al is completely incorporated in the amorphous films. Upon crystallization dislocations and stacking faults/twins, as well as small voids are formed. For all concentrations and annealing temperatures TEM shows similar defect structures.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

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