A novel frequency-doubling device based on three-terminal ballistic junction

• Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

GaInAs-InP

frequency multiplication

room temperature

GaInAs/InP quantum well structures

high-electron-mobility QW structures

trench gate-channel insulation

one-dimensional lateral-FET

1D lateral-field-effect transistor

T-shaped ballistic junction

nonlinear electrical properties

frequency-doubling device

three-terminal ballistic junction

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)