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Controlling Filamen...
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
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- Mamidala, Saketh, Ram (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Persson, Karl-Magnus (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Wernersson, Lars-Erik (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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(creator_code:org_t)
- 2021
- 2021
- Engelska.
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Ingår i: 2021 Device Research Conference (DRC). - 9781665412407 - 9781665429580
- Relaterad länk:
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http://dx.doi.org/10...
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visa fler...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO2 . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO2 as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO2 .
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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