Resonant tunneling permeable base transistor based pulsed oscillator

• A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm2. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Peak-current density

Gate capacitance

Resonant tunneling diodes (RTD)

Resonant tunneling permeable based transistor (RT0PBT)

Publication and Content Type

kon (subject category)

ref (subject category)