Direct observation of structural relaxation in amorphous compound semiconductors

• Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

amorphous solids

ion implantation

InAs

EXAFS

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