Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

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Gustafsson, AndersLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Lund Univ, Sweden (author)

Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

Article/chapterEnglish2024

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IOP Publishing Ltd,2024

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LIBRIS-ID:oai:lup.lub.lu.se:777b7ae7-9b3a-458c-ac59-e6aa37e37379
https://lup.lub.lu.se/record/777b7ae7-9b3a-458c-ac59-e6aa37e37379URI
https://doi.org/10.1088/1361-6528/ad33e9DOI
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-202468URI

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Language:English
Summary in:English

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SwePubSwePub

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Subject category:art swepub-publicationtype
Subject category:ref swepub-contenttype

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Funding Agencies|Lund Nano Lab [2022-02832]; Swedish Research Council [EM16-0024]; Foundation for Strategic Research; Knut and Alice Wallenberg foundation (KAW); Swedish Energy Agency; Crafoord foundation; NanoLund; Swedish Research Council (VR) [2021-00171, RIF21-0026]; Swedish Foundation for Strategic Research (SSF)
We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.

Subject headings and genre

NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
cathodoluminescence
III-nitrides
platelets
stacking mismatch boundaries
μ-LED
mu-LED; III-nitrides; platelets; cathodoluminescence; stacking mismatch boundaries

Added entries (persons, corporate bodies, meetings, titles ...)

Persson, AxelLinköpings universitet,Linköping University,Tunnfilmsfysik,Tekniska fakulteten,Competence Center for III-Nitride Technology C3NiT–Janzén(Swepub:liu)perpe25 (author)
Persson, Per O.Å.Linköping University (author)
Darakchieva, VanyaLinköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Competence Center for III-Nitride Technology C3NiT–Janzén(Swepub:liu)vanda79 (author)
Bi, ZhaoxiaLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Future Display Institute of Xiamen,Lund Univ, Sweden; Future Display Inst Xiamen, Peoples R China(Swepub:lu)ftf-zib (author)
Samuelson, LarsLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Southern University of Science and Technology,Lund Univ, Sweden; Southern Univ Sci & Technol, Peoples R China(Swepub:lu)ftf-lsa (author)
NanoLund: Centre for NanoscienceAnnan verksamhet, LTH (creator_code:org_t)

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