WFRF:(KANSKI J)
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- Adell, M.Chalmers University of Technology,Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory (author)
Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
- Article/chapterEnglish2006
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- AIP Publishing,2006
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- LIBRIS-ID:oai:lup.lub.lu.se:7a70d168-24ff-48cc-a944-c79f48df4fef
- https://lup.lub.lu.se/record/7a70d168-24ff-48cc-a944-c79f48df4fefURI
- https://doi.org/10.1063/1.2364182DOI
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- Language:English
- Summary in:English
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- Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
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- Adell, J.Chalmers University of Technology,Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-jae (author)
- Ilver, L.Chalmers University of Technology (author)
- Kanski, J.Chalmers University of Technology (author)
- Sadowski, J.Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Institute - Center for Molecular and Macromolecular Studies of the Polish Academy of Sciences(Swepub:lu)maxl-jsa (author)
- Lunds universitetMAX IV-laboratoriet (creator_code:org_t)
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- In:Applied Physics Letters: AIP Publishing89:170003-69511077-3118
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