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Independent Control of Nucleation and Layer Growth in Nanowires

Maliakkal, Carina B. (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Centrum för analys och syntes,Kemiska institutionen,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Faculty of Engineering, LTH
Mårtensson, Erik K. (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Tornberg, Marcus Ulf (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Jacobsson, Daniel (author)
Lund University
Persson, Axel R. (author)
Lund University,Lunds universitet,-lup-obsolete,Forskargrupper vid Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,nCHREM/ Reine Wallenberg-lup-obsolete,Lund University Research Groups,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Johansson, Jonas (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Wallenberg, Lars Reine (author)
Lund University,Lunds universitet,-lup-obsolete,Forskargrupper vid Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,nCHREM/ Reine Wallenberg-lup-obsolete,Lund University Research Groups,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Dick, Kimberly A. (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Centrum för analys och syntes,Kemiska institutionen,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Faculty of Engineering, LTH
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 (creator_code:org_t)
2020-02-12
2020
English 8 s.
In: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 14:4, s. 3868-3875
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions and will play a major role in determining material properties such as compositional uniformity, dopant density, and impurity incorporation. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet, and experimental parameters. The key insights discussed here are not restricted to Au-catalyzed GaAs nanowire growth but can be extended to most compound nanowire growths in which the different growth species has very different solubility in the catalyst particle.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Kemiteknik -- Kemiska processer (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Chemical Engineering -- Chemical Process Engineering (hsv//eng)

Keyword

Au-catalyzed
compound nanowires
GaAs nanowires
In situ TEM
incubation time before each layer

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art (subject category)
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