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InN quantum dots on...
InN quantum dots on GaN nanowires grown by MOVPE
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- Bi, Zhaoxia (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Lindgren, David (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Johansson, Jonas (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Ek, Martin (författare)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH,Center for Analysis and Synthesis/nCHREM, Lund University, Box 124, 221 00 Lund, Sweden
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- Wallenberg, Reine (författare)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH,Center for Analysis and Synthesis/nCHREM, Lund University, Box 124, 221 00 Lund, Sweden
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- Gustafsson, Anders (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Borgström, Magnus (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Ohlsson, Jonas (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,QuNano AB, Ideon Science Park, Scheelevägen 17, 223 70 Lund, Sweden
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- Monemar, Bo (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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- Samuelson, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden
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(creator_code:org_t)
- 2014-02-17
- 2014
- Engelska.
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Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- quantum dots
- nanowires
- nitride
- MOVPE
- quantum dots
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Bi, Zhaoxia
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Lindgren, David
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Johansson, Jonas
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Ek, Martin
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Wallenberg, Rein ...
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Gustafsson, Ande ...
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Borgström, Magnu ...
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Ohlsson, Jonas
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Monemar, Bo
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Samuelson, Lars
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