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A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier

Cijvat, Pieternella (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
Sjöland, Henrik (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
Cijvat, Ellie (author)
Lund University
 (creator_code:org_t)
IEEE Press, 2003
2003
English 4 s.
In: Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.. - : IEEE Press. - 0780381637 ; , s. 1094-1097
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

Keyword

wireless communication
frequency doubling
transmitter
Power amplifier

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