Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning

Borgström, MagnusLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (författare)

By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)

Zela, VilmaLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-vze (författare)
Seifert, WernerLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-wse (författare)
Samuelson, LarsLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lsa (författare)
Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)

Ingår i:7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Av författaren/redakt...: Borgström, Magnu ...; Zela, Vilma; Seifert, Werner; Samuelson, Lars

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