The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Search: id:"swepub:oai:lup.lub.lu.se:91be3a24-73e9-4733-9d9e-9ac2154a23a7" > The electrical and ...

1 of 1
Previous record
Next record
To hitlist

Details
MARC

Thelander, ClaesLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (author)

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Article/chapterEnglish2010

Publisher, publication year, extent ...

2010-04-23
IOP Publishing,2010

Numbers

LIBRIS-ID:oai:lup.lub.lu.se:91be3a24-73e9-4733-9d9e-9ac2154a23a7
https://lup.lub.lu.se/record/1594859URI
https://doi.org/10.1088/0957-4484/21/20/205703DOI

Supplementary language notes

Language:English
Summary in:English

Part of subdatabase

SwePubSwePub

Classification

Subject category:art swepub-publicationtype
Subject category:ref swepub-contenttype

Notes

The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.

Subject headings and genre

TEKNIK OCH TEKNOLOGIER Nanoteknik Nanoteknik hsv//swe
ENGINEERING AND TECHNOLOGY Nano-technology Nano-technology hsv//eng

Added entries (persons, corporate bodies, meetings, titles ...)

Dick Thelander, KimberlyLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-kdi (author)
Borgström, MagnusLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-mbo (author)
Fröberg, LinusLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lje (author)
Caroff, PhilippeLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-pic (author)
Nilsson, HenrikLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-hns (author)
Samuelson, LarsLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lsa (author)
Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)

Related titles

In:Nanotechnology: IOP Publishing21:200957-44841361-6528

Internet link

Find in a library

Nanotechnology (Search for host publication in LIBRIS)

To the university's database

1 of 1
Previous record
Next record
To hitlist

Find more in SwePub

By the author/editor: Thelander, Claes; Dick Thelander, ...; Borgström, Magnu ...; Fröberg, Linus; Caroff, Philippe; Nilsson, Henrik; show more...; Samuelson, Lars; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Nano technology; and Nano technology

Articles in the publication: Nanotechnology

By the university: Lund University

Search outside SwePub

Extend your search to:: Google; Google Book Search; Google Scholar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

LIBRIS.kb.se