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- Sun, JieLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (author)
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- Article/chapterEnglish2009
Publisher, publication year, extent ...
- AIP Publishing,2009
Numbers
- LIBRIS-ID:oai:lup.lub.lu.se:9ef1290c-e035-42ae-959a-31055e85b8bc
- https://lup.lub.lu.se/record/1311595URI
- https://doi.org/10.1063/1.3077188DOI
Supplementary language notes
- Language:English
- Summary in:English
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- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
Subject headings and genre
- NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
- NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
- quantum
- well devices
- semiconductor quantum dots
- quantum interference devices
- nanotechnology
- indium compounds
- III-V semiconductors
- high-k dielectric thin films
- hafnium compounds
- g-factor
- gallium arsenide
- atomic layer deposition
- Coulomb blockade
Added entries (persons, corporate bodies, meetings, titles ...)
- Larsson, MarcusLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-mrl (author)
- Maximov, IvanLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-im (author)
- Hardtdegen, Hilde (author)
- Xu, HongqiLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-hxu (author)
- Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)
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- In:Applied Physics Letters: AIP Publishing94:40003-69511077-3118
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