Search: L773:2158 1525 OR L773:0271 4310 OR L773:9781467357609 OR L773:9781467357623 >
Properties of RF ba...
Properties of RF bandpass amplifier topology with Q-enhancing
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- Durkalec, Laurent (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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Sunstrom, L. (author)
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Mattsson, T. (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Proceedings - IEEE International Symposium on Circuits and Systems. - 0271-4310 .- 2158-1525. ; 1, s. 529-532
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Abstract
Subject headings
Close
- This paper describes a bandpass amplifier topology for the GHz range using Q-enhancing that allows a systematic design approach to be used to control linearity, noise and power consumption. Frequency selectivity is achieved by a negative feedback network using a LC tank and a positive feedback networks using a resistor to achieve Q-enhancing. The feedback networks are fully passive in order to minimize noise and distortion.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Power consumption
- Bandpass amplifier topology
- Q-enhancing
- Frequency selectivity
Publication and Content Type
- kon (subject category)
- ref (subject category)
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