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- Bryllert, TomasLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (author)
Vertical high mobility wrap-gated InAs nanowire transistor
- Article/chapterEnglish2005
Publisher, publication year, extent ...
- 2005
- 2 s.
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- LIBRIS-ID:oai:lup.lub.lu.se:a5c5b9c9-20b3-46c4-a73d-6818658c2336
- https://lup.lub.lu.se/record/616176URI
- https://doi.org/10.1109/DRC.2005.1553100DOI
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- Language:English
- Summary in:English
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Notes
- We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
- NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
- wrap gated field effect transistor
- transconductance
- current saturation
- sub threshold characteristics
- InAs
- -0.15 V
- high mobility
- nanowire transistor
Added entries (persons, corporate bodies, meetings, titles ...)
- Samuelson, LarsLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lsa (author)
- Jensen, L (author)
- Wernersson, Lars-ErikLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH(Swepub:lu)ftf-lwe (author)
- Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)
Related titles
- In:63rd Device Research Conference Digest, 2005. DRC '0510780390407
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