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Formation of long s...
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Fan, Dingxun
(författare)
Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
- Artikel/kapitelEngelska2015
Förlag, utgivningsår, omfång ...
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2015
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Royal Society of Chemistry (RSC),2015
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7 s.
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LIBRIS-ID:oai:lup.lub.lu.se:a7c14dfa-dc5b-4673-a285-3164558d03aa
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https://lup.lub.lu.se/record/8080612URI
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https://doi.org/10.1039/c5nr04273aDOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of similar to 300 mu eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Li, Sen
(författare)
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Kang, N.
(författare)
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Caroff, Philippe
(författare)
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Wang, L. B.
(författare)
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Huang, Y. Q.
(författare)
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Deng, MingtangLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-mgd
(författare)
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Yu, ChunlinLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-ciy
(författare)
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Xu, HongqiLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Peking University(Swepub:lu)ftf-hxu
(författare)
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Fasta tillståndets fysikFysiska institutionen
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Nanoscale: Royal Society of Chemistry (RSC)7:36, s. 14822-148282040-33722040-3364
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