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High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

Zota, C. B. (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
Lindelöw, F. (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
Wernersson, L. E. (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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Lind, E. (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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 (creator_code:org_t)
2016-10
2016
English 3 s.
In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 52:22, s. 1869-1871
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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Zota, C. B.
Lindelöw, F.
Wernersson, L. E ...
Lind, E.
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ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
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Electronics Lett ...
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Lund University

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