Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3.

Ljungcrantz, HLinköping University (författare)
Hallin, CLinköping University (författare)
Janzen, ELinköping University (författare)
Sundgren, JELinköping University (författare)
Pecz, BHungarian Academy of Sciences (författare)
Wallenberg, LRLund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ook2-rwa (författare)
Linköping UniversityHungarian Academy of Sciences (creator_code:org_t)

Av författaren/redakt...: Hultman, L; Ljungcrantz, H; Hallin, C; Janzen, E; Sundgren, JE; Pecz, B; visa fler...; Wallenberg, LR; visa färre...

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