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Te incorporation an...
Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires
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- Hakkarainen, Teemu (författare)
- Tampere University of Technology
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- Rizzo Piton, Marcelo (författare)
- Federal University of São Carlos,Tampere University of Technology
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- Fiordaliso, Elisabetta Maria (författare)
- Technical University of Denmark
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- Leshchenko, Egor D. (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Koelling, Sebastian (författare)
- Eindhoven University of Technology
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- Bettini, Jefferson (författare)
- Brazilian Center For Research In Energy And Materials (CNPEM)
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- Vinicius Avanço Galeti, Helder (författare)
- Federal University of São Carlos
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- Koivusalo, Eero (författare)
- Tampere University of Technology
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- Gobato, Yara Galvaõ (författare)
- Federal University of São Carlos,Radboud University Nijmegen
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- De Giovanni Rodrigues, Ariano (författare)
- Federal University of São Carlos
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- Lupo, Donald (författare)
- University of Tampere
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- Koenraad, Paul M. (författare)
- Eindhoven University of Technology
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- Leite, Edson Roberto (författare)
- Brazilian Center For Research In Energy And Materials (CNPEM)
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- Dubrovskii, Vladimir G. (författare)
- National Research University of Information Technologies
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- Guina, Mircea (författare)
- Tampere University of Technology
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(creator_code:org_t)
- 2019
- 2019
- Engelska.
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Ingår i: Physical Review Materials. - 2475-9953. ; 3:8
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a strongly amphoteric nature in the vapor-liquid-solid process. This issue can be avoided by using Te, which is a promising but less common alternative for n-type doping of GaAs nanowires. Here, we present a detailed investigation of Te-doped self-catalyzed GaAs nanowires. We use several complementary experimental techniques, such as atom probe tomography, off-axis electron holography, micro-Raman spectroscopy, and single-nanowire transport characterization, to assess the Te concentration, the free-electron concentration, and the built-in potential in Te-doped GaAs nanowires. By combing the experimental results with a theoretical model, we show that Te atoms are mainly incorporated by the vapor-liquid-solid process through the Ga droplet, which leads to both axial and radial dopant gradients due to Te diffusion inside the nanowires and competition between axial elongation and radial growth of nanowires. Furthermore, by comparing the free-electron concentration from Raman spectroscopy and the Te-atom concentrations from atom probe tomography, we show that the activation of Te donor atoms is 100% at a doping level of 4×1018cm-3, which is a significant result in terms of future device applications.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Hakkarainen, Tee ...
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Rizzo Piton, Mar ...
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Fiordaliso, Elis ...
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Leshchenko, Egor ...
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Koelling, Sebast ...
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Bettini, Jeffers ...
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visa fler...
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Vinicius Avanço ...
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Koivusalo, Eero
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Gobato, Yara Gal ...
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De Giovanni Rodr ...
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Lupo, Donald
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Koenraad, Paul M ...
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Leite, Edson Rob ...
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Dubrovskii, Vlad ...
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Guina, Mircea
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