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- Janik, E. (author)
ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
- Article/chapterEnglish2006
Publisher, publication year, extent ...
- AIP Publishing,2006
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- LIBRIS-ID:oai:lup.lub.lu.se:cf94bbf5-f79d-41a5-b227-2a3306140dff
- https://lup.lub.lu.se/record/389817URI
- https://doi.org/10.1063/1.2357334DOI
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- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.
Subject headings and genre
- NATURVETENSKAP Fysik hsv//swe
- NATURAL SCIENCES Physical Sciences hsv//eng
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- Sadowski, JanuszLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-jsa (author)
- Dluzewski, P. (author)
- Kret, S. (author)
- Baczewski, L. T. (author)
- Petroutchik, A. (author)
- Lusakowska, E. (author)
- Wrobel, J. (author)
- Zaleszczyk, W. (author)
- Karczewski, G. (author)
- Wojtowicz, T. (author)
- Presz, A. (author)
- Lunds universitetMAX IV-laboratoriet (creator_code:org_t)
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- In:Applied Physics Letters: AIP Publishing89:130003-69511077-3118
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- Lusakowska, E.
- Wrobel, J.
- Zaleszczyk, W.
- Karczewski, G.
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