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Core-shell tfet dev...
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Passlack, M.Taiwan Semiconductor Manufacturing Company Limited, Belgium
(författare)
Core-shell tfet developments and tfet limitations
- Artikel/kapitelEngelska2019
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LIBRIS-ID:oai:lup.lub.lu.se:d1c4b8e6-152d-4c2f-a756-e91a5e574fe1
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https://lup.lub.lu.se/record/d1c4b8e6-152d-4c2f-a756-e91a5e574fe1URI
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https://doi.org/10.1109/VLSI-TSA.2019.8804674DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:kon swepub-publicationtype
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Ämneskategori:ref swepub-contenttype
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Tunneling field-effect transistors (TFET) based on a vertical gate-All-Around (VGAA) nanowire (NW) architecture with a core-shell (CS) structure have been explored for future CMOS applications. Performance predictions based on a tight-binding mode-space NEGF technique include a drive current \mathrm{I}-{\mathrm{o}\mathrm{n}} of 6.7\ \mu \mathrm{A} (NW diameter \mathrm{d}= 10.2\ \mathrm{nm}) at \mathrm{V}-{\mathrm{dd}}=0.3\ \mathrm{V} under low power (LP) conditions (\mathrm{I}-{\mathrm{off}}=1 \mathrm{pA}) for an InAs/GaSb CS TFET. This compares to Si nMOSFET \mathrm{I}-{\mathrm{on}} =2.3\ \mu \mathrm{A} at \mathrm{V}-{\mathrm{dd}}=0.55\ \mathrm{V}(\mathrm{d}=6\ \mathrm{nm}). On the experimental side, scaling of vertical CS NWs resulted in smallest dimensions of \mathrm{d}-{\mathrm{c}}= 17 nm (GaSb core) and \mathrm{t}-{\mathrm{sh}}=3 nm (InAs shell) for a total diameter of 23 nm. VGAA CS nFETs demonstrated drive current of up to 40\ \mu \mathrm{A} (\mathrm{V}-{\mathrm{d}}=0.3\ \mathrm{V}) and subthreshold swing \mathrm{SS}=40\mathrm{mV}/\mathrm{dec}(\mathrm{V}-{\mathrm{d}}=10\mathrm{mV}) for NW diameters between 35-50 nm. Although key TFET properties such as current drive and subthermal SS have been demonstrated using a VGAA CS architecture for the first time, experimental results still lag predictions. An intrinsic relationship between band-To band-Tunneling (BTBT) and \mathrm{D}-{\mathrm{it}} related trap assisted tunneling (TAT) was found which imposes challenging \mathrm{D}-{\mathrm{it}} requirements, in particular for LP \mathrm{I}-{\mathrm{off}} specifications. Complexity of fabrication and a material system foreign to CMOS manufacturing further impact prospects of TFET technology.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Ramvall, P.Taiwan Semiconductor Manufacturing Company Limited, Belgium(Swepub:lu)ftf-per
(författare)
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Vasen, T.Taiwan Semiconductor Manufacturing Company Limited, Belgium
(författare)
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Afzalian, A.Taiwan Semiconductor Manufacturing Company Limited, Belgium
(författare)
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Thelander, C.Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-cth
(författare)
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Dick, K. A.Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-kdi
(författare)
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Wernersson, L. E.Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups(Swepub:lu)ftf-lwe
(författare)
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Doornbos, G.Taiwan Semiconductor Manufacturing Company Limited, Belgium
(författare)
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Holland, M.Taiwan Semiconductor Manufacturing Company Limited, Belgium
(författare)
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Taiwan Semiconductor Manufacturing Company Limited, BelgiumNanoLund: Centre for Nanoscience
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 20199781728109428
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