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  • Zhang, G. Q.Peking University (author)

Low-field magnetotransport in graphene cavity devices

  • Article/chapterEnglish2018

Publisher, publication year, extent ...

  • 2018-03-23
  • IOP Publishing,2018

Numbers

  • LIBRIS-ID:oai:lup.lub.lu.se:d6165a04-4f69-444e-8247-fb5fc7572c80
  • https://lup.lub.lu.se/record/d6165a04-4f69-444e-8247-fb5fc7572c80URI
  • https://doi.org/10.1088/1361-6528/aab478DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Confinement and edge structures are known to play significant roles in the electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Kang, N.Peking University (author)
  • Li, J. Y.Peking University (author)
  • Lin, LiPeking University (author)
  • Peng, HailinPeking University (author)
  • Liu, ZhongfanPeking University (author)
  • Xu, H. Q.Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Peking University(Swepub:lu)ftf-hxu (author)
  • Peking UniversityFasta tillståndets fysik (creator_code:org_t)

Related titles

  • In:Nanotechnology: IOP Publishing29:200957-44841361-6528

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