Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Strained Si/SiGe MOS technology : Improving gate dielectric integrity

QC 20100525 4th IEEE International Symposium on Advanced Gate Stack Technology (ISAGST), Dallas, TX, 2007
Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally strained Si/SiGe platforms can benefit gate leakage and reliability in addition to MOSFET channel mobility. Device self-heating due to the low thermal conductivity of SiGe is shown to be the dominating factor behind compromised performance against short channel strained Si/SiGe MOSFETs. Novel thin virtual substrates aimed at reducing self-heating effects are investigated. In addition to reducing self-heating effects, the thin Virtual substrates provide further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates. This is attributed to tire lower surface roughness of the thin virtual substrates which arises due to the reduced interactions of strain-relieving misfit dislocations during thin Virtual substrate growth. Good agreement between experimental data and physical models is demonstrated, enabling gate leakage mechanisms to be identified. The advantages and challenges of using globally strained Si/SiGe to advance MOS technology are discussed.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Si
SiGe
MOSFET
Mobility enhancement
Gate leakage
Dielectric
reliability
Lifetime
Virtual substrate
n-mosfets
electrical-properties
si
ge
diffusion
si1-xgex
buffers
alloys
layers
films
Electrical engineering, electronics and photonics
Elektroteknik, elektronik och fotonik

Yana, L. (författare)
Agaiby, R. (författare)
Escobedo-Cousin, E. (författare)
O'Neill, A. G. (författare)
Hellström, Per-ErikKTH,Integrerade komponenter och kretsar(Swepub:kth)u1wc1lgb (författare)
Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (författare)
Lyutovich, K. (författare)
Kasper, E. (författare)
Claeys, C. (författare)
Parker, E. H. C. (författare)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Ingår i:Microelectronic Engineering: Elsevier BV86:3, s. 218-2230167-93171873-5568

Av författaren/redakt...: Olsen, S. H.; Yana, L.; Agaiby, R.; Escobedo-Cousin, ...; O'Neill, A. G.; Hellström, Per-E ...; visa fler...; Östling, Mikael; Lyutovich, K.; Kasper, E.; Claeys, C.; Parker, E. H. C.; visa färre...

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