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Search: id:"swepub:oai:lup.lub.lu.se:d74250cb-28f9-4e6c-b278-fe0a521f1d6a" > InAs/GaAs p-i-p qua...

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  • Park, M. S.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (author)

InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

  • Article/chapterEnglish2014

Publisher, publication year, extent ...

  • 2014-11
  • Stevenage, United Kingdom :Institution of Engineering and Technology (IET),2014

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  • LIBRIS-ID:oai:lup.lub.lu.se:d74250cb-28f9-4e6c-b278-fe0a521f1d6a
  • https://lup.lub.lu.se/record/4865218URI
  • https://doi.org/10.1049/el.2014.2437DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-31940URI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-27516URI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

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  • Jain, VishalHögskolan i Halmstad,Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Halmstad University, Sweden; Lund University, Sweden,Tillämpad matematik och fysik (MPE-lab),Lund Univ, Solid State Phys & Nanometer Struct Consortium, Lund, Sweden,Nanovetenskap(Swepub:hh)visjai (author)
  • Lee, E. H.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (author)
  • Kim, S. H.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (author)
  • Pettersson, HåkanHögskolan i Halmstad,Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Halmstad University, Sweden; Lund University, Sweden,Tillämpad matematik och fysik (MPE-lab),Lund Univ, Solid State Phys & Nanometer Struct Consortium, Lund, Sweden(Swepub:hh)hape (author)
  • Wang, Q.RISE,Acreo,Acreo Swedish ICT AB, Electrum Lab Nano & Microtechnol Fab, Kista, Sweden (author)
  • Song, J. D.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (author)
  • Choi, W. J.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (author)
  • Korea Institute of Science and Technology, South KoreaCenter for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea (creator_code:org_t)

Related titles

  • In:Electronics LettersStevenage, United Kingdom : Institution of Engineering and Technology (IET)50:23, s. 1731-17321350-911X0013-5194

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