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Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures

Khalilian, Maryam (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Persson, Axel (author)
Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Lindgren, David (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Hexagem AB
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Rosén, Martin (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Lenrick, Filip (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Industriell Produktion,Institutionen för maskinvetenskaper,Institutioner vid LTH,Centrum för analys och syntes,Kemiska institutionen,Other operations, LTH,Faculty of Engineering, LTH,Production and Materials Engineering,Department of Mechanical Engineering Sciences,Departments at LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Faculty of Engineering, LTH
Colvin, Jovana (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Hexagem AB
Ohlsson, B. Jonas (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Hexagem AB
Timm, Rainer (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Wallenberg, Reine (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Samuelson, Lars (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Hexagem AB
Gustafsson, Anders (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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 (creator_code:org_t)
2021-07-17
2021
Swedish.
In: Nano Select. - : Wiley. - 2688-4011. ; n/a:n/a, s. 1-14
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • To improve the performance and efficiency of Al containing III-Nitride-based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations are growth on non-native substrates and heteroepitaxial growth of lattice-mismatched layers. We demonstrate the ability to completely avoid structural defects including dislocations in AlxGa1-xN layers with x up to 0.90 and thicknesses over 100 nm, grown directly on submicron-sized, flat-topped GaN platelets. These structures have an excellent homogeneity over an entire array. The GaN platelets were produced by epitaxial growth and reformation of GaN nanowires, effectively blocking the propagation of threading dislocations (TDs) from the underlying substrate. The platelets have a sufficiently small volume to elastically accommodate the strain built up in the architectured AlGaN/GaN heterostructures. Effectively, we have designed a sacrificial nano-scaled GaN seed, with the ability to be strained by the AlGaN layer grown on top of it. The conditions for the growth of the AlGaN are chosen to avoid the creation of misfit dislocations and other structural defects. These thick and structural defect-free, submicron-sized AlGaN/GaN structures may open up a new path for highly efficient electronic and optoelectronic devices. These structures can be used as substrates for light-emitting diodes and transistors, either as individual devices or arrays in parallel, depending on the need for light output or transistor current.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

AlGaN
dislocation-free
III-nitride
micro-platelets
optoelectronics

Publication and Content Type

art (subject category)
ref (subject category)

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