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Lift-off process fo...
Lift-off process for nanoimprint lithography
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- Carlberg, Patrick (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Graczyk, Mariusz (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Sarwe, Eva-Lena (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Maximov, Ivan (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Beck, Marc (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Montelius, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2003
- 2003
- Engelska 5 s.
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Ingår i: Microelectronic Engineering. - 1873-5568 .- 0167-9317. ; 67-8, s. 203-207
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- lift off method
- nanoimprint lithography
- polymethyl methacrylate
- PMMA
- pattern transfer
- oxygen plasma
- liquid solvent
- silicon
- wet etch method
- metal evaporation
- 50 nm
- 20 nm
- SiO2
- Au
- surface adhesion
- metal flakes
- acetone
- dissolution
- bilayer method
- metal layer
- line widening effect
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- kon (ämneskategori)
- ref (ämneskategori)
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