High dose Fe implantation of gan : Damage build-up and dopant redistribution

• Undoped GaN epilayers implanted at room temperature with 50-325 keV Fe + ions in the fluence range of 1015 - 1017 ions/cm are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. Results show that for high ion fluences (>1 × 1016 cm-2) enhanced Fe concentration closer to the surface is observed. The Fe redistribution towards the surface increases as the ion fluence increases. Our findings are attributed to radiation enhanced diffusion during ion implantation and increasing of Fe diffusivity in the implantation-induced amorphous phase near the surface.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

NATURVETENSKAP  -- Fysik -- Subatomär fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Subatomic Physics (hsv//eng)

Nyckelord

Amorphous phase

Diffusivities

Dopant redistribution

Elastic recoil detection analysis

Fluence range

GaN epilayers

High dose

Ion fluences

Radiation enhanced diffusion

Room temperature

Rutherford backscattering/channeling

Time of flight

Gallium alloys

Gallium nitride

Ion implantation

Molecular beam epitaxy

Ion physics

Ion Physics

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