Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

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Krishnaraja, AbinayaLund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups (author)

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Article/chapterEnglish2020

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2020-09-01
American Chemical Society (ACS),2020
6 s.

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LIBRIS-ID:oai:lup.lub.lu.se:ff53ea61-59cf-4ea2-afbe-69808ab34074
https://lup.lub.lu.se/record/ff53ea61-59cf-4ea2-afbe-69808ab34074URI
https://doi.org/10.1021/acsaelm.0c00521DOI

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Language:English
Summary in:English

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Subject category:art swepub-publicationtype
Subject category:ref swepub-contenttype

Notes

Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.

Subject headings and genre

TEKNIK OCH TEKNOLOGIER Nanoteknik Nanoteknik hsv//swe
ENGINEERING AND TECHNOLOGY Nano-technology Nano-technology hsv//eng
TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
GaSb
heterojunction
InAs
InGaAsSb
nanowire
tunnel FET

Added entries (persons, corporate bodies, meetings, titles ...)

Svensson, JohannesLund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups(Swepub:lu)eit-jhs (author)
Memisevic, ElvedinLund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups(Swepub:lu)eit-eem (author)
Zhu, ZhongyunshenLund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups(Swepub:lu)zh0130zh (author)
Persson, Axel R.Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)chem-axp (author)
Lind, ErikLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups(Swepub:lu)ftf-eli (author)
Wallenberg, Lars ReineLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ook2-rwa (author)
Wernersson, Lars ErikLund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups(Swepub:lu)ftf-lwe (author)
NanoelektronikForskargrupper vid Lunds universitet (creator_code:org_t)

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In:ACS Applied Electronic Materials: American Chemical Society (ACS)2:9, s. 2882-28872637-6113

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