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Characterization of...
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Del Castillo, Ragnar Ferrand-DrakeChalmers Univ Technol, Sweden
(author)
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- Article/chapterEnglish2024
Publisher, publication year, extent ...
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2024
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,2024
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-203431
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-203431URI
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https://doi.org/10.1109/TED.2024.3392177DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|Competence Center for III-Nitride Technology C3NiT-Janzn
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The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 x 10(17) to 5 x 10(17) cm( -3) , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 x 10(17)cm( -3) offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 x 10(17) cm( -3) doping provides the highest PAE ( > 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Chen, Ding-YuanSweGaN AB, S-58278 Linkoping, Sweden
(author)
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Chen, Jr-TaiSweGaN AB, S-58278 Linkoping, Sweden
(author)
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Thorsell, MattiasChalmers Univ Technol, Sweden; SAAB AB, Sweden
(author)
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Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden(Swepub:liu)vanda79
(author)
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Rorsman, NiklasChalmers Univ Technol, Sweden
(author)
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Chalmers Univ Technol, SwedenSweGaN AB, S-58278 Linkoping, Sweden
(creator_code:org_t)
Related titles
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In:IEEE Transactions on Electron Devices: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC0018-93831557-9646
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