Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers

• This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Contact layers

Dopant impurities

Dopant segregation

Electrical characterization

Geometric sizes

I - V curve

Layer thickness

Multiquantum wells

Noise characteristic

Noise levels

Noise measurements

Noise spectroscopy

Si/SiGe

SiGe quantum wells

SiGe/Si

Strain balance

Thermal coefficients

Thermal properties

Bolometers

Electric reactors

Infrared detectors

Pixels

Signal to noise ratio

Thermal conductivity of solids

Thermodynamic properties

Semiconductor quantum wells

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)