Search: id:"swepub:oai:research.chalmers.se:01e952f3-9d29-4894-b750-ddc7ff44955b" >
Low-Pressure-Chemic...
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Huang, Tongde,1985Chalmers tekniska högskola,Chalmers University of Technology
(author)
Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
- Article/chapterEnglish2015
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LIBRIS-ID:oai:research.chalmers.se:01e952f3-9d29-4894-b750-ddc7ff44955b
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ISBN:9781479987672
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https://research.chalmers.se/publication/243074URI
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https://doi.org/10.1109/APMC.2015.7413558DOI
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Language:English
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Summary in:English
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A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (
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Axelsson, Olle,1986Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)ollea
(author)
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Malmros, Anna,1977Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e6annam
(author)
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Bergsten, Johan,1988Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)johberg
(author)
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Gustafsson, Sebastian,1990Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)sebgus
(author)
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Thorsell, Mattias,1982Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)thorsell
(author)
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Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)rorsman
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
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In:2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-339781479987672
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