High-speed 850-nm VCSELs for 40 Gb/s transmission

Gustavsson, Johan,1974Chalmers tekniska högskola,Chalmers University of Technology (author)

We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER

Westbergh, Petter,1981Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)petwes (author)
Szczerba, Krzysztof,1985Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)szczerba (author)
Haglund, Åsa,1976Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)gu95asha (author)
Larsson, Anders,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andersla (author)
Karlsson, Magnus,1967Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)magkar (author)
Andrekson, Peter,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andrekso (author)
Hopfer, FriedhelmTechnische Universität Berlin (author)
Fiol, GerritTechnische Universität Berlin (author)
Bimberg, DieterTechnische Universität Berlin (author)
Olsson, Bengt-Erik,1968Telefonaktiebolaget L M Ericsson,Ericsson(Swepub:cth)beol (author)
Kristiansson, AnnaTelefonaktiebolaget L M Ericsson,Ericsson (author)
Healy, S. B.Tyndall National Institute at National University of Ireland, Cork (author)
O'Reilly, E. P.Tyndall National Institute at National University of Ireland, Cork (author)
Joel, A. (author)
Chalmers tekniska högskolaTechnische Universität Berlin (creator_code:org_t)

By the author/editor: Gustavsson, Joha ...; Westbergh, Pette ...; Szczerba, Krzysz ...; Haglund, Åsa, 19 ...; Larsson, Anders, ...; Karlsson, Magnus ...; show more...; Andrekson, Peter ...; Hopfer, Friedhel ...; Fiol, Gerrit; Bimberg, Dieter; Olsson, Bengt-Er ...; Kristiansson, An ...; Healy, S. B.; O'Reilly, E. P.; Joel, A.; show less...

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