Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport

• We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

REIBL N

graphene

OPTICS COMMUNICATIONS

LAYER GRAPHENE

SINGLE-LAYER

V49

electron transport

optical microscopy

P6

graphene characterization

PHASE

TRANSISTORS

Epitaxial graphene

SIO2

1984

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)