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Elevated thermoelec...
Elevated thermoelectric figure of merit of n-type amorphous silicon by efficient electrical doping process
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- Banerjee, Debashree (author)
- Uppsala universitet,Fasta tillståndets elektronik,CSIR, CEERI, Pilani 333031, Rajasthan, India.
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- Vallin, Örjan, 1969- (author)
- Uppsala universitet,Fasta tillståndets elektronik,Mikrostrukturlaboratoriet
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- Kabiri Samani, Majid, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Microtechnol & Nanosci, Elect Mat Syst Lab, S-41296 Gothenburg, Sweden.
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- Majee, Subimal, 1984- (author)
- Uppsala universitet,Fasta tillståndets elektronik,CSIR, CEERI, Pilani 333031, Rajasthan, India.
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Liu, Johan, 1960 (author)
- Shanghai University,Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Microtechnol & Nanosci, Elect Mat Syst Lab, S-41296 Gothenburg, Sweden.;Shanghai Univ, SMIT Ctr, 20 Chengzhong Rd,Box 808, Shanghai 201800, Peoples R China.
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- Zhang, Zhi-Bin (author)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- Elsevier BV, 2018
- 2018
- English.
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In: Nano Energy. - : Elsevier BV. - 2211-2855 .- 2211-3282. ; 44, s. 89-94
- Related links:
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https://doi.org/10.1...
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https://research.cha...
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https://urn.kb.se/re...
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Abstract
Subject headings
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- The currently dominant thermoelectric (TE) materials used in low to medium temperature range contain Tellurium that is rare and mild-toxic. Silicon is earth abundant and environment friendly, but it is characterized by a poor TE efficiency with a low figure of merit, ZT. In this work, we report that ZT of amorphous silicon (a-Si) thin films can be enhanced by 7 orders of magnitude, reaching ∼0.64 ± 0.13 at room temperature, by means of arsenic ion implantation followed by low-temperature dopant activation. The dopant introduction employed represents a highly controllable doping technique used in standard silicon technology. It is found that the significant enhancement of ZT achieved is primarily due to a significant improvement of electrical conductivity by doping without crystallization so as to maintain the thermal conductivity and Seebeck coefficient at the level determined by the amorphous state of the silicon films. Our results open up a new route towards enabling a-Si as a prominent TE material for cost-efficient and environment-friendly TE applications at room temperature.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Keramteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Ceramics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- Energy harvesting
- Thermoelectrics
- Electrical conductivity
- Electrical doping
- Amorphous silicon
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Banerjee, Debash ...
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Vallin, Örjan, 1 ...
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Kabiri Samani, M ...
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Majee, Subimal, ...
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Zhang, Shi-Li
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Liu, Johan, 1960
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show more...
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Zhang, Zhi-Bin
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Ceramics
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Chemical Science ...
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and Materials Chemis ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Other Materials ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
- Articles in the publication
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Nano Energy
- By the university
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Chalmers University of Technology
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Uppsala University