Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films

• Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon Frohlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III-V semiconductors.

Ämnesord

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Bi

InAs films

As flux ratio

photoluminescence blueshift and broadening

electron concentration enhancement

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