Search: id:"swepub:oai:research.chalmers.se:1203fb58-ec7a-456d-a98d-8a387fc11c8a" >
Extremely anisotrop...
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Kim, Shi EnUniversity of Chicago
(author)
Extremely anisotropic van der Waals thermal conductors
- Article/chapterEnglish2021
Publisher, publication year, extent ...
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2021-09-29
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Springer Science and Business Media LLC,2021
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:research.chalmers.se:1203fb58-ec7a-456d-a98d-8a387fc11c8a
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https://doi.org/10.1038/s41586-021-03867-8DOI
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https://research.chalmers.se/publication/526550URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Notes
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The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials1–3. Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis4,5. However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS2, one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS2 (57 ± 3 mW m−1 K−1) and WS2 (41 ± 3 mW m−1 K−1) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Mujid, FauziaUniversity of Chicago
(author)
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Rai, AkashUniversity of Illinois
(author)
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Eriksson, Fredrik,1992Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)freeriks
(author)
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Suh, JoonkiUniversity of Chicago
(author)
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Poddar, PreetiUniversity of Chicago
(author)
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Ray, ArianaCornell University
(author)
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Park, ChibeomUniversity of Chicago
(author)
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Fransson, Erik,1990Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)erikfr
(author)
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Zhong, YuUniversity of Chicago
(author)
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Muller, David A.Cornell University
(author)
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Erhart, Paul,1978Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)erhart
(author)
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Cahill, David G.University of Illinois
(author)
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Park, JiwoongUniversity of Chicago
(author)
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University of ChicagoUniversity of Illinois
(creator_code:org_t)
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In:Nature: Springer Science and Business Media LLC597:7878, s. 660-6650028-08361476-4687
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Kim, Shi En
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Mujid, Fauzia
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Rai, Akash
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Eriksson, Fredri ...
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Suh, Joonki
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Poddar, Preeti
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Ray, Ariana
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Park, Chibeom
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Fransson, Erik, ...
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Zhong, Yu
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Muller, David A.
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Erhart, Paul, 19 ...
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Cahill, David G.
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Park, Jiwoong
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Chalmers University of Technology