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Electric field effe...
Electric field effects and screening in mesoscopic bismuth wires
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- Petrashov, V. T. (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Antonov, V. N. (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Nilsson, Bengt, 1954 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1999-01-01
- 1991
- English.
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In: Journal of Physics Condensed Matter. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 3:Copyright 1992, IEE, s. 9705-11
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Abstract
Subject headings
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- Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- semiconductor quantum wires
- electrical conductivity transitions
- bismuth
- quantum interference phenomena
- quantum interference devices
Publication and Content Type
- art (subject category)
- ref (subject category)
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