Search: id:"swepub:oai:research.chalmers.se:1974a4ce-212b-4504-8b24-7ab69d791764" >
ZrO2 and ZrO2/Y2O3 ...
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Johansson, MikaelChalmers tekniska högskola,Chalmers University of Technology
(author)
ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
- Article/chapterEnglish2002
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LIBRIS-ID:oai:research.chalmers.se:1974a4ce-212b-4504-8b24-7ab69d791764
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https://research.chalmers.se/publication/17786URI
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https://doi.org/10.1109/ASDAM.2002.1088524DOI
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Language:English
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Summary in:English
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Subject category:kon swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion from the dielectric layer occur only at 1100°C
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Yousif, M. Y. A.,1963Chalmers tekniska högskola,Chalmers University of Technology
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Sareen, Alok,1972Chalmers tekniska högskola,Chalmers University of Technology
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Lundgren, Per,1968Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)boris
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Bengtsson, Stefan,1961Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stefanb
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Södervall, Ulf,1954Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f8bus
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
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In:ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems, s. 279-
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