Towards Oxide Electronics: a Roadmap

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Towards Oxide Electronics: a Roadmap

Coll, M. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB),CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Fontcuberta, J. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB),CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Althammer, M. (författare): Technische Universität München (TUM),Technical University of Munich (TUM),Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany

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Bibes, M. (författare): Thales Group,Univ Paris Sud, Univ Paris Saclay, Thales, Unite Mixte Phys,CNRS, F-91767 Palaiseau, France

Boschker, H. (författare): Max Planck Gesellschaft zur Förderung der Wissenschaften e.V. (MPG),Max Planck Society for the Advancement of Science (MPG),Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

Calleja, A. (författare): OXOLUTIA SL, Avda Castell Barbera 26,Tellers 13,Nau 1, Barcelona 08210, Spain

Cheng, G. (författare): University of Science and Technology of China,University of Pittsburgh,Univ Sci & Technol China, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Anhui, Peoples R China;Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China;Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA;Pittsburgh Quantum Inst, Pittsburgh, PA 15260 USA

Cuoco, M. (författare): Universita degli Studi di Salerno,University of Salerno,Univ Salerno, CNR SPIN, IT-84084 Fisciano, SA, Italy;Univ Salerno, Dipartimento Fis ER Caianiello, IT-84084 Fisciano, SA, Italy

Dittmann, R. (författare): Forschungszentrum Jülich GmbH,Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52425 Julich, Germany

Dkhil, B. (författare): Univ Paris Saclay, CNRS UMR 8580, Cent Supelec, Lab Struct Proprietes & Modelisat Solides, F-91190 Gif Sur Yvette, France

El Baggari, I. (författare): Cornell University,Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

Fanciulli, M. (författare): Universita' degli Studi di Milano-Bicocca,University of Milano-Bicocca,Univ Milano Bicocca, Dept Mat Sci, Milan, Italy,CNR SPIN, Naples Unit, Complesso Univ Monte St Angelo,Via Cinthia, IT-80126 Naples, Italy

Fina, I. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB),CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Fortunato, E. (författare): Nova University of Lisbon, Portugal,Univ NOVA Lisboa UNL, FCT, Dept Ciencia Mat, CENIMAT i3N, Lisbon, Portugal;CEMOP UNINOVA, P-2829516 Caparica, Portugal

Frontera, C. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB),CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Fujita, S. (författare): Kyoto University,Kyoto Univ, Kyoto 6158520, Japan,CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Garcia, V. (författare): Thales Group,Univ Paris Sud, Univ Paris Saclay, Thales, Unite Mixte Phys,CNRS, F-91767 Palaiseau, France

Goennenwein, S. T.B. (författare): Technische Universität Dresden,Tech Univ Dresden, Inst Festkorperphys, D-01062 Dresden, Germany;Tech Univ Dresden, Ctr Transport & Devices Emergent Mat, D-01062 Dresden, Germany,Tech Univ Denmark, Dept Energy Storage & Convers, DK-4000 Roskilde, Denmark

Granqvist, Claes Göran, 1946- (författare): Uppsala universitet,Fasta tillståndets fysik

Grollier, J. (författare): Thales Group,Univ Paris Sud, Univ Paris Saclay, Thales, Unite Mixte Phys,CNRS, F-91767 Palaiseau, France

Gross, R. (författare): Technische Universität München (TUM),Technical University of Munich (TUM),Nanosystems Initiative Munich (NIM),Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany;NIM, D-80799 Munich, Germany,Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

Hagfeldt, A. (författare): Ecole Polytechnique Federale de Lausanne (EPFL),Swiss Federal Institute of Technology in Lausanne (EPFL),Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photomol Sci, CH-1015 Lausanne, Switzerland

Herranz, G. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB),CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Cerdanyola Del Valles 08193, Catalonia, Spain

Hono, K. (författare): National Institute for Materials Science (NIMS),NIMS, Res Ctr Magnet & Spintron Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

Houwman, E. (författare): Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

Huijben, M. (författare): Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

Kalaboukhov, Alexei, 1975 (författare): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Microtechnol & Nanosci, MC2, Gothenburg, Sweden

Keeble, D. J. (författare): University of Dundee,Univ Dundee, Sch Sci & Engn, Carnegie Lab Phys, SUPA, Dundee DD1 4HN, Scotland

Koster, G. (författare): Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

Kourkoutis, L. F. (författare): Cornell University,Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA;Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

Levy, J. (författare): University of Pittsburgh,Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany;Pittsburgh Quantum Inst, Pittsburgh, PA 15260 USA,Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

Lira-Cantu, M. (författare): Institut Catala de Nanociencia i Nanotecnologia,CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, E-08193 Barcelona, Spain;BIST, Campus UAB, E-08193 Barcelona, Spain

MacManus-Driscoll, J. L. (författare): University Of Cambridge

Mannhart, Jochen (författare): Max Planck Gesellschaft zur Förderung der Wissenschaften e.V. (MPG),Max Planck Society for the Advancement of Science (MPG),Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

Martins, R. (författare): Universita' degli Studi di Milano-Bicocca,University of Milano-Bicocca,Consiglo Nazionale Delle Richerche,Univ Milano Bicocca, Dept Mat Sci, Milan, Italy;IMM CNR, MDM Lab, Agrate Brianza, Italy

Menzel, S. (författare): Pittsburgh Quantum Inst, Pittsburgh, PA 15260 USA,Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA;Cornell Univ, Dept Phys, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA,Jozef Stefan Inst, Adv Mat Dept, Jamova Cesta 39, Ljubljana 1000, Slovenia

Mikolajick, T. (författare): Technische Universität Dresden,NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

Napari, M. (författare): University Of Cambridge,Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

Nguyen, M. D. (författare): Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

Niklasson, Gunnar, 1953- (författare): Uppsala universitet,Fasta tillståndets fysik

Paillard, C. (författare): Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA

Panigrahi, S. (författare): Nova University of Lisbon, Portugal,Univ NOVA Lisboa UNL, FCT, Dept Ciencia Mat, CENIMAT i3N, Lisbon, Portugal;CEMOP UNINOVA, P-2829516 Caparica, Portugal,Univ Politecn Valencia, Nanophoton Technol Ctr, Camino Vera S-N, E-46022 Valencia, Spain

Rijnders, G. (författare)

Sánchez, F. (författare): Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB)

Sanchis, P. (författare): Universitat Politecnica de Valencia (UPV),Polytechnic University of Valencia (UPV)

Sanna, S. (författare): Danmarks Tekniske Universitet,Technical University of Denmark

Schlom, D. G. (författare): Cornell University,Cornell Univ, Dept Phys, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA;Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

Schroeder, U. (författare): NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany

Shen, K. M. (författare): Cornell University

Siemon, A. (författare): Rheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University,Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech IWE 2, D-52066 Aachen, Germany

Spreitzer, Matjaz (författare): Institut Jožef Stefan,Jozef Stefan Institute

Sukegawa, H. (författare): National Institute for Materials Science (NIMS),NIMS, Res Ctr Magnet & Spintron Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

Tamayo, R. (författare): OXOLUTIA SL, Avda Castell Barbera 26,Tellers 13,Nau 1, Barcelona 08210, Spain

van den Brink, J. (författare): Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden,Leibniz Institute for Solid State and Materials Research Dresden,IFW Dresden, Inst Theoret Solid State Phys, Helm Holtzstr 20, D-01069 Dresden, Germany

Pryds, N. (författare): Danmarks Tekniske Universitet,Technical University of Denmark,Tech Univ Denmark, Dept Energy Storage & Convers, DK-4000 Roskilde, Denmark

Granozio, F. Miletto (författare)

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(creator_code:org_t)

Elsevier BV, 2019
2019
Engelska.
Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 482, s. 1-93

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Tidskriftsartikel (refereegranskat)

Abstract Ämnesord

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At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.

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Av författaren/redakt...: Coll, M.; Fontcuberta, J.; Althammer, M.; Bibes, M.; Boschker, H.; Calleja, A.; visa fler...; Cheng, G.; Cuoco, M.; Dittmann, R.; Dkhil, B.; El Baggari, I.; Fanciulli, M.; Fina, I.; Fortunato, E.; Frontera, C.; Fujita, S.; Garcia, V.; Goennenwein, S. ...; Granqvist, Claes ...; Grollier, J.; Gross, R.; Hagfeldt, A.; Herranz, G.; Hono, K.; Houwman, E.; Huijben, M.; Kalaboukhov, Ale ...; Keeble, D. J.; Koster, G.; Kourkoutis, L. F ...; Levy, J.; Lira-Cantu, M.; MacManus-Driscol ...; Mannhart, Jochen; Martins, R.; Menzel, S.; Mikolajick, T.; Napari, M.; Nguyen, M. D.; Niklasson, Gunna ...; Paillard, C.; Panigrahi, S.; Rijnders, G.; Sánchez, F.; Sanchis, P.; Sanna, S.; Schlom, D. G.; Schroeder, U.; Shen, K. M.; Siemon, A.; Spreitzer, Matja ...; Sukegawa, H.; Tamayo, R.; van den Brink, J ...; Pryds, N.; Granozio, F. Mil ...; visa färre...

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Av lärosätet: Chalmers tekniska högskola; Uppsala universitet

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Towards Oxide Electronics: a Roadmap

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