Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

Amirfeiz, Petra,1973Chalmers tekniska högskola,Chalmers University of Technology (författare)

The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.

Sanz-Velasco, Anke,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)ankesanz (författare)
Bengtsson, Stefan,1961Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stefanb (författare)
Chalmers tekniska högskola (creator_code:org_t)

Av författaren/redakt...: Amirfeiz, Petra, ...; Sanz-Velasco, An ...; Bengtsson, Stefa ...

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