Temperature stability of intersubband transitions in AlN/GaN quantum wells

• Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Poisson equation

piezoelectricity

thermal expansion

Schrodinger equation

photoluminescence

semiconductor quantum wells

gallium compounds

molecular beam epitaxial growth

semiconductor heterojunctions

conduction bands

heat treatment

SCF calculations

III-V semiconductors

aluminium compounds

Publication and Content Type

art (subject category)

ref (subject category)