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Metal-Free Graphene...
Metal-Free Graphene as Transparent Electrode for GaN-Based Light-Emitters
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- Stattin, Martin, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lockhart de la Rosa, César Javier, 1987 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sun, Jie, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Yurgens, Avgust, 1959 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Haglund, Åsa, 1976 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2013
- 2013
- Engelska.
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Ingår i: Japanese Journal of Applied Physics. - 1347-4065 .- 0021-4922. ; 52:8 PART 2, s. 08JG05-
- Relaterad länk:
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http://publications.... (primary) (free)
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https://doi.org/10.7...
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Abstract
Ämnesord
Stäng
- Graphene contacts to p-GaN are considered as an alternative to indium–tin-oxide transparent electrodes in GaN based vertical-cavity surface-emitting lasers (VCSELs). Contact properties were investigated on light-emitting diode and p-GaN test structures, where dielectric apertures were used to eliminate the influence of the metal pads used to bias the contacts. Using single layer graphene we were able to operate light emitting diodes with current densities of 300 A/cm2. Addition of a second layer of graphene increased the maximum bias current to 1 kA/cm2. However, the contacts are non-linear and cannot withstand high current densities for a long time. The results are promising but further investigation and improvement is needed for graphene to be a viable alternative to indium–tin-oxide for blue VCSELs.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
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